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Goford Products

G030P04STL P MOSFET

G030P04STL features compact size, low impedance, and high thermal efficiency, achieving high power density in sTOLL packaging. A single sTOLL MOSFET can replace multiple parallel traditional devices, simplifying design, reducing components, and lowering system cost.

GT005N03D5SA N MOSFET

The PQFN5x6 dual-side cooling package features an innovative dual-path thermal design. This allows the device to handle higher power in the same footprint, enabling more compact power supplies with greater power density. Lower operating temperature also improves parameters like RDS(on), reducing conduction loss and boosting overall system efficiency.

GT011N08TL N MOSFET

SGT N Mos in TOLL with advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be widely applied for Power switch,BMS and DC/DC converters.

GT100N20TT N MOSFET

SGT N Mos in TOLT with advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be widely applied for Power switch,BMSand DC/DC converters.

GT880P15 P MOSFET

SGT P Mos in TO-220 DFN5*6-8L DPAK(TO-252) ,the simplified gate driving technique that often reduces overall cost,can be widely used for Power switch,BMS and DC/DC converters.

GC11N65 SJ MOFET

SJ MOS in TO-220 SO-8(DFN5*6-8L) TO-220F DPAK(TO-252) D2PAK(TO-263) with better conduction resistance,extremely low gate charge,excellent EMI performance ,ideal choice for household appliance drivers,computer power supplies,UPS,EV charging.

GT065P06 P MOSFET

SGT P Mos in TO-220 SO-8(DFN5*6-8L) TO-220F DPAK(TO-252) ,the simplified gate driving technique that often reduces overall cost, can be widely used for motor drives, battery management systems, load switches.

GT095N10 N MOSFET

In SO-8(DFN5*6) DPAK(TO-252) with advanced trench technology to provide excellent RDS(ON) , low gate charge can be widely applied for Power supply, Led Driver, EV charger etc.

GT023N10 N MOSFET

TO-247, D2PAK(to-263), TOLL, TO-220 , ideal choice for motor control, BMS for its Large current carrying capacity, Low conduction resistance Low thermal resistance.

45P40 P MOSFET

P MOS in DPAK with advanced trench technology to provide excellent RDS(ON) , low gate charge can be widely applied for Power supply, BMS, Converter and EV charger etc.

GT011N03D5E clip + ESD

N channel trench Mos , in power so-8 (DFN5*6), with Large current carrying capacity, Low conduction resistance , can be widely used for Telecom.

Goford Resources

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    2026-09-16
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    2026-09-01
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    2026-08-13
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  • BESS MOSFET选型指南：预充电、主继电器与PCS电路

    2026-07-15
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  • 能源安全升级：BESS 为何已成为电力系统的核心支柱

    2026-06-24
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  • BMS Safety Starts with the Right MOSFET Selection

    2026-06-04
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